9 results
Analytical model for charge transport in organic thin-film transistors: application to polythiophene
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- Journal:
- The European Physical Journal - Applied Physics / Volume 59 / Issue 2 / August 2012
- Published online by Cambridge University Press:
- 03 September 2012, 20201
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- August 2012
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Analytic model for organic thin film transistors (OTFTs): effect of contact resistances application to the octithiophene
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- Journal:
- The European Physical Journal - Applied Physics / Volume 48 / Issue 3 / December 2009
- Published online by Cambridge University Press:
- 30 October 2009, 30401
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- December 2009
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Extraction of the InP/InGaAs metallic collector-up heterojunction bipolar transistor small-signal equivalent circuit
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- Journal:
- The European Physical Journal - Applied Physics / Volume 42 / Issue 3 / June 2008
- Published online by Cambridge University Press:
- 30 April 2008, pp. 177-186
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- June 2008
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Extracting parameters from the current-voltage characteristics of polycrystalline octithiophene thin film field-effect transistors
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- Journal:
- The European Physical Journal - Applied Physics / Volume 39 / Issue 1 / July 2007
- Published online by Cambridge University Press:
- 28 June 2007, pp. 7-16
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- July 2007
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Effect of leakage current induced by B+H+ implantation in the isolation process for self passivated GaAlAs/GaInP/ GaAs HBT
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- Journal:
- The European Physical Journal - Applied Physics / Volume 19 / Issue 3 / September 2002
- Published online by Cambridge University Press:
- 12 September 2002, pp. 195-199
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- September 2002
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Charge transport limited by grain boundaries in polycrystalline octithiophene thin film transistors
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- Journal:
- The European Physical Journal - Applied Physics / Volume 19 / Issue 2 / August 2002
- Published online by Cambridge University Press:
- 24 July 2002, pp. 117-122
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- August 2002
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Simulation of I-V characteristics of organic thin film transistor: Application to the dihexylquaterthiophene
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- Journal:
- The European Physical Journal - Applied Physics / Volume 14 / Issue 2 / May 2001
- Published online by Cambridge University Press:
- 15 May 2001, pp. 121-125
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- May 2001
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Surface passivation of composition graded base in GaAlAs/GaInP/GaAs heterojunction bipolar transistor
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- Journal:
- The European Physical Journal - Applied Physics / Volume 6 / Issue 3 / June 1999
- Published online by Cambridge University Press:
- 15 June 1999, pp. 299-301
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- June 1999
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Investigation on base surface recombination in Self Passivated GaAlAs/GaInP/GaAs Heterojunction Bipolar Transistor
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- Journal:
- The European Physical Journal - Applied Physics / Volume 4 / Issue 1 / October 1998
- Published online by Cambridge University Press:
- 15 October 1998, pp. 27-29
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- October 1998
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